6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Special Applications
The HIP1020 is well suited to work with N-Channel
MOSFETs controlling voltages other than 12V, 5V, or 3.3V
provided three basic constraints are observed. The first
constraint is that the bias voltage for the HIP1020 is either
12V or 5V. Chip operation at voltages significantly below 5V
is not possible, while a bias voltage very much above 12V
can unnecessarily stress the part. Operation between 5V
and 12V can confuse the chip as it tries to determine
whether to operate as a voltage doubler or voltage tripler.
The final two constraints have to do with proper operation of
the power MOSFETs. These constraints assume that a rail
voltage, V
RAIL
, is to be switched using an N-Channel power
MOSFET having a gate-to-source breakdown voltage of V
BR
 
and a threshold voltage of V
TH
.
V
GATE
 can be either V
HGATE
 or V
LGATE
 depending on
which pin is connected to the power MOSFET and will be
selected based on which gate voltage is most appropriate for
the application. The requirement in Equation 2 is necessary
to assure that the power MOSFET is fully enhanced. V
TH
 
should be the maximum data-sheet value needed to assure
adequately low r
DSON
. The requirement in Equation 3
assures that the power MOSFET is protected from
breakdown of the gate oxide.
V
TH
V
GATE
V
RAIL

<
(EQ. 2)
V
BR
V
GATE
V
RAIL

>
(EQ. 3)
HIP1020
相关PDF资料
HIP6018BCBZ-T IC REG TRPL BCK/LINEAR 24-SOIC
HIP6021CB-T IC REG QD BCK/LINEAR 28-SOIC
HIP6521CB-T IC REG QD BCK/LINEAR SYNC 16SOIC
HMC920LP5E IC CTRLR ACTIVE BIAS 32QFN
IDTTSE2002B3CNRG IC TEMP SENS EEPROM DFN-8
IPM6220ACAZ-T IC REG 5OUT BUCK/LDO SYNC 24SSOP
IR2170 IC CURRENT SENSE 600V 1MA 8-DIP
IR2171STR IC CURRENT SENSE 8SOIC
相关代理商/技术参数
HIP1020CKZ-T 功能描述:热插拔功率分布 DEVICE BAY PWR CNTRLR RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
HIP1030 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection
HIP1030_00 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection
HIP1030AS 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection
HIP1031 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Half Amp High Side Driver with Overload Protection
HIP1031AS 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP1090 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Protected High Side Power Switch with Transient Suppression
HIP1090AS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: